bcw 65, bcw 66 1 sep-30-1999 npn silicon af transistor ? for general af applications ? high current gain ? low collector-emitter saturation voltage ? complementary types: bcw 67, bcw 68 (pnp) 1 2 3 vps05161 pin configuration package type marking bcw 65a bcw 65b bcw 65c bcw 66f bcw 66g bcw 66h eas ebs ecs efs egs ehs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 maximum ratings parameter symbol bcw 65 bcw 66 unit collector-emitter voltage v ceo 32 45 v collector-base voltage v cbo 60 75 emitter-base voltage v ebo 5 5 dc collector current i c 800 ma peak collector current i cm 1 a base current ma 100 i b peak base current i bm 200 total power dissipation , t s = 79 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 285 k/w junction - soldering point r thjs 215 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcw 65, bcw 66 2 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. min. typ. dc characteristics v (br)ceo 32 45 bcw 65 bcw 66 collector-emitter breakdown voltage i c = 10 ma, i b = 0 - - v - - bcw 65 bcw 66 v (br)cbo 60 75 - - collector-base breakdown voltage i c = 10 a, i b = 0 - - - - 5 v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 collector cutoff current v cb = 32 v, i e = 0 v cb = 45 v, i e = 0 bcw 65 bcw 66 i cbo - - - - 20 20 na collector cutoff current v cb = 32 v, i e = 0 , t a = 150 c v cb = 45 v, i e = 0 , t a = 150 c bcw 65 bcw 66 i cbo - - - - 20 20 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 20 na dc current gain 1) i c = 100 a, v ce = 10 v h fe -grp. a/f h fe -grp. b/g h fe -grp. c/h h fe 35 50 80 - - - - - - - dc current gain 1) i c = 10 ma, v ce = 1 v h fe -grp. a/f h fe -grp. b/g h fe -grp. c/h h fe 75 110 180 - - - - - - - dc current gain 1) i c = 100 ma, v ce = 1 v h fe -grp. a/f h fe -grp. b/g h fe -grp. c/h h fe 100 160 250 160 250 350 250 400 630 - 1) pulse test: t 300 s, d = 2%
bcw 65, bcw 66 3 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics dc current gain 1) i c = 500 ma, v ce = 2 v h fe -grp. a/f h fe -grp. b/g h fe -grp. c/h h fe - - - 35 60 100 - - - - collector-emitter saturation voltage1) i c = 100 ma, i b = 10 ma i c = 500 ma, i b = 50 ma v cesat - - - - 0.3 0.7 v base-emitter saturation voltage 1) i c = 100 ma, i b = 10 ma i c = 500 ma, i b = 50 ma v besat - - - - 1.25 2 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 20 mhz f t - 170 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 6 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 60 -
bcw 65, bcw 66 4 sep-30-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00390 bcw 65/66 150 50 100 ?c t a s t 100 200 300 mw 400 p tot t t ; as transition frequency f t = f ( i c ) v ce = 5v 10 ehp00391 bcw 65/66 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00392 bcw 65/66 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t collector cutoff current i cbo = f ( t a ) v cb = v cemax 10 0 50 100 150 bcw 65/66 ehp00393 t a 5 10 10 na 10 cb0 5 5 5 10 10 5 4 3 2 1 0 max typ ? c
bcw 65, bcw 66 5 sep-30-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 10 0 600 bcw 65/66 ehp00395 v ce sat 10 ma 10 10 10 3 2 1 0 -1 5 5 5 mv 200 400 800 150 25 -50 c ? c ? c ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 10 03 bcw 65/66 ehp00394 v be sat 10 ma 10 c 10 10 3 2 1 0 -1 5 5 5 v 12 4 150 25 -50 ? c ? c ? c dc current gain h fe = f ( i c ) v ce = 1v 10 10 10 10 bcw 65/66 ehp00396 h ma -1 0 2 3 fe 3 10 10 2 0 10 5 5 10 1 1 10 5 100 25 -50 555 c ? c ? c ? c
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